Impressive 32 GB DDR4 Module from Samsung Is Based on 20nm 8 Gb Chips ~ The World is Mine

Oct 21, 2014

Impressive 32 GB DDR4 Module from Samsung Is Based on 20nm 8 Gb Chips

10/21/2014 07:10:00 PM

dannzfay

DIMM memory modules with a capacity of 128 GB will only be released in 2015, and 64 GB models are pretty rare too. However, it's a lot easier to release high-capacity RDIMM ones, especially when you're the one who's making the chips, as is the case with Samsung.

In case you didn't know, Samsung is one of the world's major suppliers of semiconductors. Sure, Intel may be the most famous CPU maker, but Samsung has its own range (ARM-based) and is a major name on the RAM and NAND Flash markets as well. It is the random access memory technology front where the group has just made its move. Samsung has formally released two products. Technically, it's one product and a second one based on it, but eh, details.

The 8 Gigabit DDR4 memory chip

This is the primary point of interest here. The chip has a storage space of 8 Gb, which is basically the same as one gigabyte. The chip is built on the 20nm manufacturing process, which ensures a high efficiency and lower cost of manufacture than other nodes. Which, in turn, should boil down to lower price for the chip itself and, in turn, for the module of 32 GB. Since the new memory is made of enterprise and business products, you can be sure that some clients will order the chips in bulk and make system boards and memory PCBs themselves.

The 32 GB DDR4 module

The RDIMM has a total capacity of 32 GB and a data rate of 2,400 megabits per second (Mbps) per pin, which is 29% faster than the normal performance of DDR3 (1,866 Mbps). Admittedly, DDR3 often works at 1,600 Mbps / MHz, but in enterprise applications it's hard to find anything slower than 1,866 Mbps, so the latter makes for a more accurate comparison. Either way, with DDR4 also providing a major decrease in power requirements, the benefits of upgrading to the new RAM easily offset the disadvantages. The RDIMM form factor should be compatible with all servers out there and the larger installations based on them, like data centers and clouds.

Availability and pricing

The memory should already be available for sale, but prices will be subject to order size and further negotiations. There are 4 Gb and 6 Gb chips as well. However, larger-capacity products like 128 GB modules will take a while to make. Not too long though, since Samsung already has 3D through silicon technology (TSV).

Press Release:
Samsung Electronics announced that it is mass producing the industry's most advanced 8-gigabit (Gb) DDR4 memory and 32-gigabyte (GB) module, both of which will be manufactured based on a new 20-nanometer (nm) process technology, for use in enterprise servers.
"Our new 20 nm 8 Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers," said Jeeho Baek, Vice President of Memory Marketing at Samsung Electronics. "By expanding the production of our 20 nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market."
With its new 8 Gb DDR4, Samsung now offers a full line-up of 20 nm-based DRAM to lead a new era of 20 nm DRAM efficiency that also includes the 20 nm 4 Gb DDR3 for PCs and the 20 nm 6 Gb LPDDR3 for mobile devices.
Using the new 8 Gb DDR4 chip, Samsung began producing the 32 GB registered dual in-line memory module (RDIMM) earlier this month. The new module's data transfer rate per pin reaches up to 2,400 megabits per second (Mbps), which delivers an approximately 29 percent performance increase, compared to the 1,866 Mbps bandwidth of a DDR3 server module.
Beyond the 32 GB modules, the new 8 Gb chips will allow production of server modules with a maximum capacity of 128 GB by applying 3D through silicon via (TSV) technology, which will encourage further expansion of the high-density DRAM market.
The new high density DDR4, also boasts improved error correction features, which will increase memory reliability in the design of enterprise servers. In addition, the new DDR4 chip and module use 1.2 volt, which is currently the lowest possible voltage.