SK Hynix 20nm DDR3L-RS DRAM with Reduced Standby Power

One of the conundrums on the DRAM market is that companies have no other way of encouraging sales than launching better and better technologies, and this, in turn, causes existing products to pile up.

SK Hynix hasn't found a solution to this problem, so it is going ahead with this “last resort” tactic. The newest press release introduces the DDR3L-RS DRAM based on 20nm manufacturing technology, The memory maker is quite bold in its assumptions, expecting and hoping that DDR3L-RS will become the best memory solution for Ultrabooks and tablets. For our part, we see a high chance of this happening. The RS in DDR3L-RS does, after all, stand for Reduced Standby power. As all DDR3L DRAM, this latest memory type runs on 1.35V. Due to the aforementioned 20nm process technology, and some optimizations, SK Hynix managed to reduce idle power by 70%. That said, DDR3L-RS chips have capacities of 2 Gb (Gigabit), 4 Gb and 8 Gb. They can be used individually in single-board computers, or any consumer electronics where modules can't be used.

SO-DIMMs (Small Outline Dual Inline Memory Module) are being made as well though, with 2 GB (gigabyte), 4 GB and 8 GB. “With the release of the new DDR3L-RS DRAM, we are now able to provide price competitive and low power products to the customers and these products will open a new area of memory semiconductor as one of the best memory solutions for the low to mid-end market,” said Mr. Ji Bum Kim, Head of Worldwide Marketing & Sales Division of SK Hynix. Analysts expect ultrabook shipments to account for 11% of all mobile PCs in 2012. The share will grow each year, until it becomes 39% in 2014 and 52% in 2015. In other words, it is a PC type expected to positively evolve over the next few years, shipment-wise, a rare thing in today's troubled economy.

SK Hynix intros 20nm DDR3L-RS
Image credits to SK Hynix

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